Toshiba Corporation GT50J121 | 搜芯易Sourcengine

Toshiba Corporation GT50J121

生命周期状态
Contact Mfr
说明
Trans IGBT Chip N-CH 600V 50A 240W 3-Pin(3+Tab) TO-3PL
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
Terminal Position
SINGLE
Additional Feature
HIGH SPEED
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-on Time-Nom (ton)
240 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
430 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
50 A
Power Dissipation-Max (Abs)
240 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
600 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED