Toshiba Corporation GT30J341,Q | 搜芯易Sourcengine

Toshiba Corporation GT30J341,Q

生命周期状态
Active
RoHS
符合RoHS标准
说明
IGBT Transistors pb-f igbt / transistor to-3pn moq=50 v=600 f=60hz
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
2
Case Connection
COLLECTOR
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
230
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
250
Gate-emitter Voltage-Max (V)
25
Turn-off Time-Nom (toff) (ns)
400
Collector Current-Max (IC) (A)
59
Operating Temperature-Max (Cel)
175
Collector-emitter Voltage-Max (V)
600