Toshiba Corporation GT30J122(Q) | 搜芯易Sourcengine

Toshiba Corporation GT30J122(Q)

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
2.8 V
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Fall Time-Max (tf)
400 ns
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-on Time-Nom (ton)
300 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
400 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
30 A
Power Dissipation-Max (Abs)
75 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
6 V
Collector-emitter Voltage-Max
600 V