Toshiba Corporation GT25J101 | 搜芯易Sourcengine

Toshiba Corporation GT25J101

生命周期状态
Contact Mfr
说明
Trans IGBT Chip N-CH 600V 25A 150W 3-Pin(3+Tab) TO-3PN
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
MOTOR CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e0
VCEsat-Max (V)
4
Case Connection
COLLECTOR
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
HIGH SPEED
Fall Time-Max (ns)
350
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
600
Power Dissipation-Max (W)
150
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
400
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
500
Collector Current-Max (IC) (A)
25
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
6
Collector-emitter Voltage-Max (V)
600
Power Dissipation Ambient-Max (W)
150