Toshiba Corporation GT25G101 | 搜芯易Sourcengine

Toshiba Corporation GT25G101

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 25A I(C), 400V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
GENERAL PURPOSE SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e0
VCEsat-Max (V)
8
Case Connection
COLLECTOR
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Fall Time-Max (ns)
6000
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
500
Power Dissipation-Max (W)
75
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
150
Gate-emitter Voltage-Max (V)
25
Turn-off Time-Nom (toff) (ns)
4500
Collector Current-Max (IC) (A)
25
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
7
Collector-emitter Voltage-Max (V)
400
Power Dissipation Ambient-Max (W)
75