Toshiba Corporation GT20J101 | 搜芯易Sourcengine

Toshiba Corporation GT20J101

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
IGBTs 3pn pp1 j1,active,discon(07-10)/phase-out(09-01)/obsolete(09-04),
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
HIGH SPEED
Fall Time-Max (ns)
300
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
130
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
400
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Nom (toff) (ns)
500
Collector Current-Max (IC) (A)
20
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
600
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED