Toshiba Corporation GT20G102 | 搜芯易Sourcengine

Toshiba Corporation GT20G102

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 20A I(C), 400V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

VCEsat-Max
8 V
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
SINGLE
Fall Time-Max (tf)
6000 ns
Number of Elements
1
Rise Time-Max (tr)
500 ns
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
GENERAL PURPOSE SWITCHING
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
20 A
Power Dissipation-Max (Abs)
60 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
5 V
Collector-emitter Voltage-Max
400 V
Power Dissipation Ambient-Max
60 W