Toshiba Corporation GT20D101 | 搜芯易Sourcengine

Toshiba Corporation GT20D101

生命周期状态
Contact Mfr
说明
IGBTs pb 3pl igbt pp2,discon(03-04)/phase-out(04-07)/obsolete(04-10),phase-out-->2004-10-31
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

VCEsat-Max
3 V
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER AMPLIFIER
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
20 A
Power Dissipation-Max (Abs)
180 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
3.2 V
Collector-emitter Voltage-Max
250 V
Power Dissipation Ambient-Max
180 W