Toshiba Corporation GT10G102 | 搜芯易Sourcengine

Toshiba Corporation GT10G102

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 10A I(C), 400V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
ISOLATED
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Turn-on Time-Nom (ton)
150 ns
Turn-off Time-Nom (toff)
4500 ns
Collector Current-Max (IC)
10 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
400 V