GAN SYSTEMS INC GS66516T-TR | 搜芯易Sourcengine

GAN SYSTEMS INC GS66516T-TR

生命周期状态
Transferred
RoHS
符合RoHS标准
说明
Trans MOSFET N-CH GaN 650V 60A 4-Pin ULGA T/R
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-N4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HIGH ELECTRON MOBILITY
J-STD-609 Code
e4
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Finish
GOLD OVER NICKEL
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
60
Moisture Sensitivity Level
3
Transistor Element Material
GALLIUM NITRIDE
DS Breakdown Voltage-Min (V)
650
Feedback Cap-Max (Crss) (pF)
5.9
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
120
Drain-source On Resistance-Max (ohm)
0.032
Time@Peak Reflow Temperature-Max (s)
30