GS66516T-E02-MR
GAN SYSTEMS INC
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明RF Power Field-Effect Transistor, 1-Element, Gallium Nitride, N-Channel, High Electron Mobility FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- Mfr P/NGS66516T-E02-MR
- Mfr NameGAN SYSTEMS INC
- New CategoryRF Power Field-Effect Transistors
- Old CategoryPower Field-Effect Transistors
- New Part TypeTRANSISTORS
- Old Part TypeTRANSISTORS
- Part Objectid145156133451
GS66516T-E02-MR有0家供应商货源可供购买或竞价
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