GAN SYSTEMS INC GS66516B-TR | 搜芯易Sourcengine

GAN SYSTEMS INC GS66516B-TR

生命周期状态
Transferred
RoHS
符合RoHS标准
说明
MOSFET 650V, 60A, GaN E-mode, GaNPX package, Bottom-side cooled
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-XBCC-N6
Configuration
Single
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e4
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Finish
GOLD OVER NICKEL
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
6
Package Body Material
UNSPECIFIED
Polarity/Channel Type
P-CHANNEL
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Drain Current-Max (ID) (A)
60
Moisture Sensitivity Level
3
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
650
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30