GAN SYSTEMS INC GS66508T-MR | 搜芯易Sourcengine

GAN SYSTEMS INC GS66508T-MR

生命周期状态
Active
RoHS
符合RoHS标准
说明
Top-Side Cooled 650 V E-Mode GaN Transistor
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-XBCC-N4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e4
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Finish
Gold (Au) - with Nickel (Ni) barrier
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
4
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Drain Current-Max (ID) (A)
30
Moisture Sensitivity Level
3
Transistor Element Material
GALLIUM NITRIDE
DS Breakdown Voltage-Min (V)
650
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Time@Peak Reflow Temperature-Max (s)
30