INFINEON TECHNOLOGIES AG GS66508B-MR | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG GS66508B-MR

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 30A I(D), 650V, 0.063ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-XUUC-N4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
4
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
30
Transistor Element Material
GALLIUM NITRIDE
DS Breakdown Voltage-Min (V)
650
Feedback Cap-Max (Crss) (pF)
1.5
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
60
Drain-source On Resistance-Max (ohm)
0.063