GAN SYSTEMS INC GS-065-011-1-L-TR | 搜芯易Sourcengine

GAN SYSTEMS INC GS-065-011-1-L-TR

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET 650V, 11A, GaN E-mode, 5x6 PDFN, Bottom-side cooled
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-N8
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
11
Moisture Sensitivity Level
3
Transistor Element Material
GALLIUM NITRIDE
DS Breakdown Voltage-Min (V)
650
Feedback Cap-Max (Crss) (pF)
0.4
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
19
Drain-source On Resistance-Max (ohm)
0.19