MITEL SEMICONDUCTOR GP350MHB06S | 搜芯易Sourcengine

MITEL SEMICONDUCTOR GP350MHB06S

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 500A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
2.6 V
JESD-30 Code
R-PUFM-X11
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
Terminal Position
UPPER
Additional Feature
HIGH SPEED
Number of Elements
2
Number of Terminals
11
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
MOTOR CONTROL
Turn-on Time-Nom (ton)
380 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
910 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
500 A
Power Dissipation-Max (Abs)
1750 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
600 V