ZARLINK SEMICONDUCTOR INC GP250MHB06S | 搜芯易Sourcengine

ZARLINK SEMICONDUCTOR INC GP250MHB06S

生命周期状态
Transferred
说明
Insulated Gate Bipolar Transistor, 250A I(C), 600V V(BR)CES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max (V)
2.8
Number of Elements
1
Power Dissipation-Max (W)
1250
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
250
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
600