GP1200FSS12S
MITEL SEMICONDUCTOR
- 生命周期状态Discontinued
- 说明Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max3.6 V
- Number of Elements1
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)1200 A
- Power Dissipation-Max (Abs)7500 W
- Collector-emitter Voltage-Max1200 V
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GP1200FSS12S
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GP1200FSS12S