Hitachi, Ltd. GN6030C | 搜芯易Sourcengine

Hitachi, Ltd. GN6030C

生命周期状态
Transferred
说明
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
GENERAL PURPOSE SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Fall Time-Max (ns)
400
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
400
Power Dissipation-Max (W)
150
Transistor Element Material
SILICON
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
400
Collector Current-Max (IC) (A)
30
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
5
Collector-emitter Voltage-Max (V)
600