GN4014ZB4LD
Renesas Technology Corp.
- 生命周期状态Transferred
- RoHS符合RoHS标准
- 说明Insulated Gate Bipolar Transistor, 14A I(C), 370V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountNO
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)60
- Gate-emitter Voltage-Max (V)20
- Collector Current-Max (IC) (A)14
- Operating Temperature-Max (Cel)150
- Gate-emitter Thr Voltage-Max (V)2.2
- Collector-emitter Voltage-Max (V)370
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GN4014ZB4LD