GM71VS18163BLJ-6
LG SEMICON CO LTD
- 生命周期状态Transferred
- 说明EDO DRAM, 1MX16, 60ns, CMOS, PDSO42
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDSO-J42
- Memory Width16
- Package CodeSOJ
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormJ BEND
- J-STD-609 Codee0
- Memory IC TypeEDO DRAM
- Refresh Cycles1024
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Memory Organization1MX16
- Number of Terminals42
- Terminal Pitch (mm)1.27
- Access Time-Max (ns)60
- Number of Words Code1M
- Memory Density (bits)16777216
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Supply Voltage-Nom (V)3.3
- Number of Words (words)1048576
- Standby Current-Max (A)0.00015
- Supply Current-Max (mA)185
- Package Equivalence CodeSOJ42,.44
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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GM71VS18163BLJ-6