Taiyo Yuden GED56P9P09S10 | 搜芯易Sourcengine

Taiyo Yuden GED56P9P09S10

生命周期状态
Active-Unconfirmed
RoHS
符合RoHS标准
说明
DDR DRAM, 256KX9, 100ns, CMOS
类别
Semiconductors Memory ICs DRAMs DDR DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
S-PQCC-J
Memory Width
9
Package Shape
SQUARE
Surface Mount
YES
Terminal Form
J BEND
J-STD-609 Code
e3
Memory IC Type
DDR DRAM
Operating Mode
ASYNCHRONOUS
Number of Ports
1
Terminal Finish
Matte Tin (Sn)
Terminal Position
QUAD
Memory Organization
256KX9
Number of Functions
1
Access Time-Max (ns)
100
Number of Words Code
256K
Memory Density (bits)
2359296
Package Body Material
PLASTIC/EPOXY
Number of Words (words)
262144