Taiyo Yuden GED100S4Z04W12 | 搜芯易Sourcengine

Taiyo Yuden GED100S4Z04W12

生命周期状态
Active-Unconfirmed
RoHS
符合RoHS标准
说明
DDR DRAM, 1MX4, 120ns, CMOS
类别
Semiconductors Memory ICs DRAMs DDR DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PDSO-G
Memory Width
4
Package Shape
RECTANGULAR
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
Memory IC Type
DDR DRAM
Operating Mode
ASYNCHRONOUS
Number of Ports
1
Terminal Finish
Matte Tin (Sn)
Terminal Position
DUAL
Memory Organization
1MX4
Number of Functions
1
Access Time-Max (ns)
120
Number of Words Code
1M
Memory Density (bits)
4194304
Package Body Material
PLASTIC/EPOXY
Number of Words (words)
1048576