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GE10020

HARRIS SEMICONDUCTOR

HARRIS SEMICONDUCTOR GE10020
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8541.29.00.95
  • SB Code
    8541.29.00.80
  • VCEsat-Max
    4 V
  • JESD-30 Code
    O-MBFM-P2
  • Configuration
    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
  • JEDEC-95 Code
    TO-204AE
  • JESD-609 Code
    e0
  • Package Shape
    ROUND
  • Package Style
    FLANGE MOUNT Meter
  • Surface Mount
    NO
  • Terminal Form
    PIN/PEG
  • Case Connection
    COLLECTOR
  • Terminal Finish
    TIN LEAD
  • Terminal Position
    BOTTOM
  • Number of Elements
    1
  • Number of Terminals
    2
  • Qualification Status
    Not Qualified
  • Package Body Material
    METAL
  • Polarity/Channel Type
    NPN
  • Transistor Application
    SWITCHING
  • Turn-on Time-Max (ton)
    1200 ns
  • Turn-off Time-Max (toff)
    4000 ns
  • DC Current Gain-Min (hFE)
    75
  • Operating Temperature-Max
    200 Cel
  • Collector Current-Max (IC)
    60 A
  • Power Dissipation-Max (Abs)
    250 W
  • Transistor Element Material
    SILICON
  • Collector-emitter Voltage-Max
    200 V
  • Power Dissipation Ambient-Max
    250 W
  • Collector-base Capacitance-Max
    750 pF

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GE10020
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GE10020