GD5F2GQ4UBYIGR
GigaDevice
- 生命周期状态Contact Mfr
- RoHS符合RoHS标准
- 说明NAND Flash NAND 2GB 3.3V, WSON 8*6
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- Width6 mm
- Length8 mm
- TechnologyCMOS
- JESD-30 CodeR-PDSO-N8
- Memory Width4
- Organization512MX4
- Package CodeHSON
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, HEAT SINK/SLUG Meter
- Surface MountYES
- Terminal FormNO LEAD
- Memory Density2147483648 bit
- Memory IC TypeFLASH
- Operating ModeSYNCHRONOUS
- Terminal Pitch1.27 mm
- Number of Words536870912 words
- Parallel/SerialSERIAL
- Temperature GradeINDUSTRIAL
- Terminal PositionDUAL
- Additional FeatureIT ALSO HAVE MEMORY WIDTH X1
- Number of Functions1
- Number of Terminals8
- Programming Voltage3.3 V
- Number of Words Code512M
- Package Body MaterialPLASTIC/EPOXY
- Alternate Memory Width2
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Max (Vsup)3.6 V
- Supply Voltage-Min (Vsup)2.7 V
- Supply Voltage-Nom (Vsup)3.3 V
- Clock Frequency-Max (fCLK)120 MHz
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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GD5F2GQ4UBYIGR