International Rectifier Corporation GA600GD25S | 搜芯易Sourcengine

International Rectifier Corporation GA600GD25S

生命周期状态
Transferred
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 600A I(C), 250V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X6
Configuration
SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
1.4
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
LOW CONDUCTION LOSS
Number of Elements
1
Number of Terminals
6
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1920
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
2010
Gate-emitter Voltage-Max (V)
17
Turn-off Time-Nom (toff) (ns)
1780
Collector Current-Max (IC) (A)
600
Operating Temperature-Max (Cel)
125
Collector-emitter Voltage-Max (V)
250