Diodes Incorporated FZT658 | 搜芯易Sourcengine

Diodes Incorporated FZT658

生命周期状态
Active
RoHS
符合RoHS标准
说明
DIODES INC. - FZT658 - Bipolar (BJT) Single Transistor, NPN, 400 V, 500 mA, 2 W, SOT-223, Surface Mount
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
Case Connection
COLLECTOR
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
40
Power Dissipation-Max (W)
2
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
0.5
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
400
Transition Frequency-Nom (fT) (MHz)
50
Time@Peak Reflow Temperature-Max (s)
30