INFINEON TECHNOLOGIES AG FZ250R65KE3 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG FZ250R65KE3

生命周期状态
Active
RoHS
符合RoHS标准
说明
Insulated Gate Bipolar Transistor, 250A I(C), 6500V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PUFM-X5
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
3.4
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
5
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
850
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Nom (toff) (ns)
8100
Collector Current-Max (IC) (A)
250
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-50
Gate-emitter Thr Voltage-Max (V)
6.4
Collector-emitter Voltage-Max (V)
6500
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED