INFINEON TECHNOLOGIES AG FZ2400R12HE4_B9 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG FZ2400R12HE4_B9

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 3560A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PUFM-X9
Configuration
COMPLEX
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
3
Number of Terminals
9
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
880
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Nom (toff) (ns)
1320
Collector Current-Max (IC) (A)
3560
Collector-emitter Voltage-Max (V)
1200
Screening Level / Reference Standard
UL APPROVED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED