INFINEON TECHNOLOGIES AG FZ1200R33KF2C | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG FZ1200R33KF2C

生命周期状态
EOL
说明
IGBT Modules 3300V 1200A SINGLE
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
3A228.C
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-XUFM-X9
Configuration
PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
4.25
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
3
Number of Terminals
9
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
14500
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
480
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Nom (toff) (ns)
1900
Collector Current-Max (IC) (A)
2000
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
3300
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED