Fujitsu Semiconductor America, Inc. FT6122D | 搜芯易Sourcengine

Fujitsu Semiconductor America, Inc. FT6122D

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 4A I(D), 120V, 0.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PSIP-T12
Configuration
2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Additional Feature
LOGIC LEVEL COMPATIBLE
Number of Elements
4
Number of Terminals
12
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
4 A
Transistor Application
SWITCHING
Feedback Cap-Max (Crss)
90 pF
DS Breakdown Voltage-Min
120 V
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
36 W
Drain-source On Resistance-Max
0.5 ohm
Pulsed Drain Current-Max (IDM)
8 A