Fujitsu Semiconductor America, Inc. FT5777M | 搜芯易Sourcengine

Fujitsu Semiconductor America, Inc. FT5777M

生命周期状态
Discontinued
说明
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 4-Element, NPN and PNP, Silicon, Plastic/Epoxy, 12 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

VCEsat-Max
1.5 V
JESD-30 Code
R-PSFM-T12
Configuration
4 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
ISOLATED
Terminal Position
SINGLE
Number of Elements
4
Number of Terminals
12
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN AND PNP
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
500
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
3 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
100 V
Power Dissipation Ambient-Max
21 W