International Rectifier Corporation FSYC360D1 | 搜芯易Sourcengine

International Rectifier Corporation FSYC360D1

生命周期状态
Discontinued
REACH
REACH compliant
说明
Power Field-Effect Transistor, 21A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-CBCC-N3
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN LEAD
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
21 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
400 V
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.21 ohm
Pulsed Drain Current-Max (IDM)
63 A