SUMITOMO ELECTRIC DEVICE INNOVATIONS USA INC FSX027X | 搜芯易Sourcengine

SUMITOMO ELECTRIC DEVICE INNOVATIONS USA INC FSX027X

生命周期状态
Discontinued
说明
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, P-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-XUUC-N4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
4
Package Body Material
UNSPECIFIED
Polarity/Channel Type
P-CHANNEL
Highest Frequency Band
X BAND
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
12
Operating Temperature-Max (Cel)
175