FSN0920
Microsemi Corporation
- 生命周期状态Discontinued
- 说明Power Field-Effect Transistor, 9A I(D), 200V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeS-MSFM-P3
- ConfigurationSINGLE
- Package ShapeSQUARE
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)9
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)200
- Drain-source On Resistance-Max (ohm)0.55
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FSN0920