INFINEON TECHNOLOGIES AG FS200R07A02E3S6BKSA2 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG FS200R07A02E3S6BKSA2

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IGBT MODULE HYBRID 28MDIP
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max (V)
6.5
Case Connection
ISOLATED
Polarity/Channel Type
N-Channel
Power Dissipation-Max (W)
694
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
220
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
570
Collector Current-Max (IC) (A)
400
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
700
Configuration
Three Phase