HARRIS SEMICONDUCTOR FRX130R3 | 搜芯易Sourcengine

HARRIS SEMICONDUCTOR FRX130R3

生命周期状态
Transferred
说明
Power Field-Effect Transistor, 6A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-CQCC-N18
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
QUAD
Additional Feature
RADIATION HARDENED
Number of Elements
1
Number of Terminals
18
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
11.4
Drain Current-Max (ID) (A)
6
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Operating Temperature-Max (Cel)
150
Pulsed Drain Current-Max (IDM) (A)
18
Drain-source On Resistance-Max (ohm)
0.18