HARRIS SEMICONDUCTOR FRM244H2 | 搜芯易Sourcengine

HARRIS SEMICONDUCTOR FRM244H2

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 12A I(D), 250V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
O-MBFM-P2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-204AA
JESD-609 Code
e0
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
Terminal Position
BOTTOM
Additional Feature
RADIATION HARDENED
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
12 A
Turn-on Time-Max (ton)
320 ns
DS Breakdown Voltage-Min
250 V
Turn-off Time-Max (toff)
338 ns
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
125 W
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
125 W
Drain-source On Resistance-Max
0.4 ohm
Pulsed Drain Current-Max (IDM)
36 A