HARRIS SEMICONDUCTOR FRL9230H3 | 搜芯易Sourcengine

HARRIS SEMICONDUCTOR FRL9230H3

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 3A I(D), 200V, 1.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
O-MBCY-W3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-205AF
JESD-609 Code
e0
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
Terminal Position
BOTTOM
Additional Feature
RADIATION HARDENED
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
3 A
Turn-on Time-Max (ton)
134 ns
DS Breakdown Voltage-Min
200 V
Turn-off Time-Max (toff)
102 ns
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
25 W
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
25 W
Drain-source On Resistance-Max
1.3 ohm
Pulsed Drain Current-Max (IDM)
9 A