HARRIS SEMICONDUCTOR FRL234H | 搜芯易Sourcengine

HARRIS SEMICONDUCTOR FRL234H

生命周期状态
Transferred
说明
Power Field-Effect Transistor, 0.7ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-MBCY-W3
JEDEC-95 Code
TO-205AF
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Additional Feature
RADIATION HARDENED
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Drain-source On Resistance-Max (ohm)
0.7