HARRIS SEMICONDUCTOR FRE9260R4 | 搜芯易Sourcengine

HARRIS SEMICONDUCTOR FRE9260R4

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 19A I(D), 200V, 0.21ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-MSFM-P3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-258AA
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Position
SINGLE
Additional Feature
RADIATION HARDENED
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
19 A
DS Breakdown Voltage-Min
200 V
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
150 W
Drain-source On Resistance-Max
0.21 ohm
Pulsed Drain Current-Max (IDM)
57 A