FQPF6N40
FAIRCHILD SEMICONDUCTOR CORP
- 生命周期状态Discontinued
- REACHREACH compliant
- 说明Power Field-Effect Transistor, 3.73A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)3.73 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min400 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)39 W
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)330 mJ
- Drain-source On Resistance-Max1.15 ohm
- Pulsed Drain Current-Max (IDM)14.9 A
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FQPF6N40