FQPF1P50
FAIRCHILD SEMICONDUCTOR CORP
- 生命周期状态EOL
- RoHS符合RoHS标准
- 说明MOSFET P-CH 500V 1.03A TO220F
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal FinishMATTE TIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID)1.03 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min500 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)28 W
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)110 mJ
- Drain-source On Resistance-Max10.5 ohm
- Pulsed Drain Current-Max (IDM)4.12 A
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FQPF1P50