ONSEMI FQI4N80TU | 搜芯易Sourcengine

ONSEMI FQI4N80TU

生命周期状态
EOL
RoHS
符合RoHS标准
说明
Trans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) I2PAK Rail
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-262AA
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
3.9 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
800 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
130 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
460 mJ
Drain-source On Resistance-Max
3.6 ohm
Pulsed Drain Current-Max (IDM)
15.6 A