ONSEMI FQD7N20 | 搜芯易Sourcengine

ONSEMI FQD7N20

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 5.3A I(D), 200V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
45
Drain Current-Max (ID) (A)
5.3
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
165
DS Breakdown Voltage-Min (V)
200
Feedback Cap-Max (Crss) (pF)
12
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Max (toff) (ns)
120
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
73
Pulsed Drain Current-Max (IDM) (A)
21
Drain-source On Resistance-Max (ohm)
0.69
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED