FAIRCHILD SEMICONDUCTOR CORP FQD10N20CTM | 搜芯易Sourcengine

FAIRCHILD SEMICONDUCTOR CORP FQD10N20CTM

生命周期状态
EOL
RoHS
符合RoHS标准
说明
MOSFET N-CH/200V/10A/QFET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
Single
JEDEC-95 Code
TO-252AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
FAST SWITCHING
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
50
Drain Current-Max (ID) (A)
7.8
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
200
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
210
Pulsed Drain Current-Max (IDM) (A)
31.2
Drain-source On Resistance-Max (ohm)
0.36
Time@Peak Reflow Temperature-Max (s)
30
Width
6.22 mm
Length
6.73 mm