ONSEMI FQB34P10TM-F085 | 搜芯易Sourcengine

ONSEMI FQB34P10TM-F085

生命周期状态
EOL
说明
ONSEMI - FQB34P10TM-F085 - PMOS D2PAK 100V 60 MOHM / REEL
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
33.5 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
100 V
Operating Temperature-Max
175 Cel
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
155 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
2200 mJ
Peak Reflow Temperature (Cel)
245
Drain-source On Resistance-Max
0.06 ohm
Pulsed Drain Current-Max (IDM)
134 A
Time@Peak Reflow Temperature-Max (s)
30