FAIRCHILD SEMICONDUCTOR CORP FQA8N80C_F109 | 搜芯易Sourcengine

FAIRCHILD SEMICONDUCTOR CORP FQA8N80C_F109

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 8.4A I(D), 800V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
8.4 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
800 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
220 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
850 mJ
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Drain-source On Resistance-Max
1.55 ohm
Pulsed Drain Current-Max (IDM)
33.6 A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED