ONSEMI FQA6N90C-F109 | 搜芯易Sourcengine

ONSEMI FQA6N90C-F109

生命周期状态
EOL
RoHS
符合RoHS标准
说明
ONSEMI - FQA6N90C-F109 - Power MOSFET, N Channel, 900 V, 6 A, 1.93 ohm, TO-3PN, Through Hole
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
6 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
900 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
198 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
650 mJ
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Drain-source On Resistance-Max
2.3 ohm
Pulsed Drain Current-Max (IDM)
24 A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED