FQA36P15_F109
FAIRCHILD SEMICONDUCTOR CORP
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Power Field-Effect Transistor, 36A I(D), 150V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureFAST SWITCHING
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)294
- Drain Current-Max (ID) (A)36
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)150
- Operating Temperature-Max (Cel)175
- Avalanche Energy Rating (Eas) (mJ)1400
- Pulsed Drain Current-Max (IDM) (A)144
- Drain-source On Resistance-Max (ohm)0.09
FQA36P15_F109有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
FQA36P15_F109